document number: 88554 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 15-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 glass passivated ultrafast rectifier byv26dgp, byv26egp vishay general semiconductor features ? superectifier structure for high reliability condition ? cavity-free glass- passivated junction ? ultrafast reverse recovery time ? low forward voltage drop ? low switching losses, high efficiency ? high forward surge capability ? meets environmental standard mil-s-19500 ? solder dip 275 c max. 10 s, per jesd 22-b106 ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. mechanical data case: do-204ac, molded epoxy over glass body molding compound meets ul 94 v-0 flammabi lity rating base p/n-e3 - rohs compliant, commercial grade base p/nhe3 - rohs compli ant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 cla ss 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end note (1) peak reverse energy measured at i r = 400 ma, t j = t j max. on inductive load, t = 20 s primary characteristics i f(av) 1.0 a v rrm 800 v, 1000 v i fsm 30 a t rr 75 ns v f 1.3 v t j max. 175 c do-204ac (do-15) superectifier ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol byv26dgp byv26egp unit maximum repetitive pe ak reverse voltage v rrm 800 1000 v maximum rms voltage v rms 560 700 v maximum dc blocking voltage v dc 800 1000 v maximum average forw ard rectified current 0.375" (9.5 mm) lead length (fig. 1) i f(av) 1.0 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 30 a non repetitive peak reverse energy e rsm (1) 10 mj operating junction and storage temperature range t j , t stg - 65 to + 175 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88554 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 15-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 byv26dgp, byv26egp vishay general semiconductor notes (1) thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, mounted on pcb with 0.5" x 0.5" (12 mm x 12 mm) cop per pads (2) thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsink note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol byv26dgp byv26egp unit minimum avalanche breakdown voltage 100 a v br 900 1100 v maximum instantaneous forward voltage 1.0 a t j = 25 c v f 2.5 v t j = 175 c 1.3 maximum dc reverse current at rated dc blocking voltage t a = 25 c i r 5.0 a t a = 165 c 150 max. reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 75 ns typical junction capacitance 4.0 v, 1 mhz c j 15 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol byv26dgp byv26egp unit typical thermal resistance r ? ja (1) 70 c/w r ? jl (2) 16 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode BYV26EGP-E3/54 0.428 54 4000 13" di ameter paper tape and reel BYV26EGP-E3/73 0.428 73 2000 ammo pack packaging byv26egphe3/54 (1) 0.428 54 4000 13" diameter paper tape and reel byv26egphe3/73 (1) 0.428 73 2000 ammo pack packaging 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 lead mounted on heat s ink s t a = ambient temperature temperature (c) average forward rectified current (a) mounted on p.c.b. 0.375 " (9.5 mm) lead length on 0.47 " x 0.47 " (12 mm x 12 mm) copper pad s t l = lead temperature re s i s tive or inductive load 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 0.2 0.4 0.6 0.8 1.0 1.2 average forward current (a) average power lo ss (w) d = t p /t t p t d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0
document number: 88554 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 15-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 byv26dgp, byv26egp vishay general semiconductor fig. 3 - maximum non-repetiti ve peak forward surge current fig. 4 - typical instantaneous forward voltage characteristics fig. 5 - typical reverse leakage characteristics fig. 6 - typical junction capacitance fig. 7 - typical transient thermal impedance 1 10 100 1 10 100 number of cycle s at 60 hz peak forward s urge current (a) t j = t j max. 10 m s s ingle half s ine-wave in s tan taneou s fo rwar d current (a) in s tantaneou s forward voltage (v) 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 100 10 1 0.1 0.01 t j = 150 c t j = 125 c t j = 25 c t j = 175 c t j = 25 c percent of peak rever s e voltage (%) 0 20406080100 100 10 1 0.1 0.01 0.001 in s tantaneou s rever s e leakage current (a) t j = 165 c t j = 125 c t j = 175 c 0.1 1 10 100 1 10 100 rever s e voltage (v) junction capacitanc e (pf) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 0.01 0.1 1 10 100 1 10 100 t - pul s e duration ( s ) tran s ient thermal impedance (c/w) mounted on p.c.b. 0.375 " (9.5 mm) lead length on 0.47 " x 0.47 " (12 mm x 12 mm) copper pad s
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88554 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 15-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 byv26dgp, byv26egp vishay general semiconductor package outline dimensions in inches (millimeters) do-204ac (do-15) 0.034 (0.86) 0.028 (0.71) dia. 0.140 (3.6) 0.104 (2.6) dia. 1.0 (25.4) min. 0.300 (7.6) 0.230 (5.8) 1.0 (25.4) min.
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